Publication Order Number: 2N5550/D. 2N5550, 2N5551. Preferred Device. Amplifier Transistors. • These are Pb−Free Devices*. Tell us what product you were looking for and couldn't find.
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2N5551 Datasheet (PDF) 1.1. Size:10K upd 2N5551DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 160V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0. Size:189K upd UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES. High collector-emitter voltage: VCEO=160V.
High current gain APPLICATIONS. Telephone switching circuit. Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x- 1.3. Size:249K upd 2N5551CN Semiconductor Semiconductor NPN Silicon Transistor Descriptions. General purpose amplifier. High voltage application Features. High collector breakdown voltage: VCBO = 180V, VCEO = 160V.
Low collector saturation voltage: VCE(sat)=0.5V(MAX.) Ordering Information Type NO. Marking Package Code 2N5551CN 2N5551C TO-92N Outline Dimensions unit: mm 4.20 1.4. Size:249K upd 2N5551N Semiconductor Semiconductor NPN Silicon Transistor Descriptions. General purpose amplifier. High voltage application Features.
High collector breakdown voltage: VCBO = 180V, VCEO = 160V. Low collector saturation voltage: VCE(sat)=0.5V(MAX.). Complementary pair with 2N5401N Ordering Information Type NO. Marking Package Code 2N5551N 2N5551 TO-9 1.5. Size:428K upd 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 BVCEO 160 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 5 V - 10 mA 80 TO-18 LCC-3 3.
Hermetic packages 4. ESCC and JANS qualified 1. Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid.
The 2N5551HR is a silicon planar NPN transistor spe 1.6. Size:550K upd Typical Characterisitics 2N5551K hFE —— IC Static Characteristic 50 1000 COMMON EMITTER 300uA Ta=25℃ 270uA 40 Ta=100℃ 240uA 210uA 30 180uA 100 Ta=25℃ 150uA 20 120uA 90uA 10 60uA COMMON EMITTER IB=30uA VCE=5V 0 10 02468 110 100 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCEsat —— IC VBEsat —— IC 1000 2 1 Ta=25℃ Ta=10 1.7. Size:31K upd 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 0.51 ± 0.10 (0.02 ± 0.004) 0.31 FEATURES rad. (0.012). SILICON PLANAR EPITAXIAL NPN 3 TRANSISTOR. HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21.
CECC SCREENING OPTIONS 1.9 1.8. Size:339K upd SEMICONDUCTOR 2N5551SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L FEATURES High Collector Breakdwon Voltage DIM MILLIMETERS + A 2.90 0.1 2 3: VCBO=180V, VCEO=160V B 1.30+0.20/-0.15 C 1.30 MAX Low Leakage Current.
1 D 0.40+0.15/-0.05: ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20 G 1.90 Low Saturatio 1.9. Size:188K motorola MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon. 2N5551.Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 2904, STYLE 1 TO92 (TO226AA) CollectorEmitter Voltage VCEO 140 160 Vdc CollectorBase Voltage VCBO 160 180 Vdc EmitterBase Voltage VEB 1.10. Size:49K philips DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 1 collector 2 base APPLICATIONS 3 em 1.11.
Size:53K philips DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 1 collector 2 base APPLICATIONS 3 emi 1.12. Size:216K fairchildsemi April 2006 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Base) Suffix -Y means hFE 180240 in 2N5551 (Test condition: IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S 1.13. Size:171K fairchildsemi June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
Suffix -C means Center Collector in 2N5551 (1. Base) Suffix -Y means hFE 180240 in 2N5551 (Test condition: IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S 1.14.
Size:53K samsung 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V TO-92 Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Junction 1.15. Size:64K central 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 1.16. Size:208K mcc MCC Micro Commercial Components TM 2N5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features This device is designed for general purpose high voltage amplifiers NPN General and gas discharge display drivers.
Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistor 1.17. Size:88K onsemi 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices.
COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current - 1.18. Size:178K utc UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR?
FEATURES. High collector-emitter voltage: VCEO=160V. High current gain?
APPLICATIONS. Telephone switching circuit.
Amplifier? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-AB3-R SOT 1.19. Size:217K auk 2N5551 NPN Silicon Transistor Descriptions PIN Connection. General purpose amplifier C.
High voltage application Features B. High collector breakdown voltage: VCBO = 180V, VCEO = 160V. Low collector saturation voltage: E VCE(sat)=0.5V(MAX.) TO-92. Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551 TO 1.20. Size:203K secos 2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of '-C' specifies halogen & lead-free TO-92 4.55±0.2 3.5±0.2 FEATURES.
Switching and amplification in high voltage. Low current(max.
600mA). High voltage(max.180v) 0.43+0.08 –0.07 46+0.1 0. –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collecto 1.21. Size:279K cdil Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector -B 1.22.
Size:32K kec SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS: VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D: ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85: VCE(sat)=0.2V(Max.), 1.23. Size:32K kec SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS: VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current.
B 4.80 MAX G C 3.70 MAX D: ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85: VCE(sat)=0.2V(Max.), 1.24. Size:33K kec SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2: VCBO=180V, VCEO=160V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95: ICBO=50nA(Max.) VCB=120V J 0.13+0.1 1.25. Size:220K lge 2N5551(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max.
600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25? Unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VC 1.26. Size:386K wietron 2N5551 NPN Transistors TO-92 1. EMITTER 1 2 2. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage V CEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc PD Total Device Dissipation T =25 C W A 0.625 Junction Temperature T 150 j C Storage, Temperature Tstg C 1.27.
Size:52K hsmc Spec. No.: HE6219 HI-SINCERITY Issued Date: 1992.09.21 Revised Date: 2004.12.28 MICROELECTRONICS CORP. Page No.: 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92. Complements to PNP Type H2N5401. High Collector-Emitter Breakdown Voltage (VCEO160V (@IC=1mA)) Absolute Maximum Ratings. Maximum Tempera 1.28.
Size:260K can-sheng TO-92 Plastic-Encapsulate Transistors TO-92 TO-92 TO-92 TO-92 TRANSISTOR (NPN) 2N5551 TRANSISTOR (NPN) TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES FEATURES FEATURES FEATURES Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage 1. EMlTTER 1.29. Size:136K firstsilicon SEMICONDUCTOR 2N5551 TECHNICAL DATA 2N5551 TRANSISTOR (NPN) B C FEATURES General Purpose Switching Application DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) D 0.55 MAX E 1.00 F 1.27 Symbol Parameter Value Unit G 0.85 H 0.45 VCBO Collector-Base Voltage 180 V H J 14.00 0.50 + L 2.30 F F VCEO Collector-E 1.30. Size:1058K shenzhen-tuofeng-semi Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR( NPN ) TO-92 FEATURES Switching and amplification in high voltage Applications such as telephony 1. EMITTER Low current(max. BASE High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS.
TA=25℃ unless otherwise noted Symbol Parame.
2N2222 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2222 SMD Transistor Code: 1B Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.5 W Maximum Collector-Base Voltage Vcb : 60 V Maximum Collector-Emitter Voltage Vce : 30 V Maximum Emitter-Base Voltage Veb : 5 V Maximum Collector Current Ic max : 0.8 A Max. Operating Junction Temperature (Tj): 175 °C Transition Frequency (ft): 250 MHz Collector Capacitance (Cc): 8 pF Forward Current Transfer Ratio (hFE), MIN: 100 Noise Figure, dB: - Package: TO18. Cross-Reference Search 2N2222 Datasheet (PDF) 1.1. Size:563K upd SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1. High Speed Saturated Switching.
Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE 1.2. Size:1138K upd 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2. Hermetic packages LCC-3 UB. ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
Up to 100 krad(Si) low dose ratee Description Figure 1. Internal schematic 1.3. Size:563K upd SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1. High Speed Saturated Switching. Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE 1.4.
Size:165K upd P2N2222A Amplifier Transistors NPN Silicon Features. These are Pb-Free Devices. COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc 3 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Devi 1.5.
Size:86K upd SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C. High Speed Saturated Switching. Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas 1.6.
Size:86K upd SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C. High Speed Saturated Switching.
Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas 1.7.
Size:138K upd TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2221A 2N2222A JANSD – 10K Rads (Si) 2N2221AL 2N2222AL JANSP – 30K Rads (Si) 2N2221AUA 2N2222AUA 1.8. Size:86K upd SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C. High Speed Saturated Switching. Hermetic LCC3 Ceramic package.
Variant B to MIL-PRF-19500/255 outline. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas 1.9. Size:238K motorola MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 CollectorEmitter Voltage VCEO 40 Vdc 3 CollectorBase Voltage VCBO 75 Vdc CASE 2904, STYLE 17 EmitterBase Voltage VEBO 6.0 Vdc TO92 (TO226AA) Collector Current Continuous IC 600 mAdc 1.10.
Size:238K motorola MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 CollectorEmitter Voltage VCEO 40 Vdc 3 CollectorBase Voltage VCBO 75 Vdc CASE 2904, STYLE 17 EmitterBase Voltage VEBO 6.0 Vdc TO92 (TO226AA) Collector Current Continuous IC 600 mAdc 1.11. Size:53K philips DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING High current (max. 800 mA) PIN DESCRIPTION Low voltage (max. 1 emitter 2 ba 1.12.
Size:71K st 2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col 1.13. Size:166K st 2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur 1.14.
Size:168K st 2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur 1.15. Size:116K central DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 1.16. Size:232K mcc MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ('P' Suffix designates Transistors RoHS Compliant.
See ordering information) Maximum Ratings Symbol Ra 1.17. Size:164K onsemi P2N2222A Amplifier Transistors NPN Silicon Features These are Pb-Free Devices.
COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc 3 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dis 1.18. Size:250K optek Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage.
75 V Ceramic surface mount package Collector-Emitter Voltage. Size:186K optek 1.20. Size:240K cdil Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collecto 1.21. Size:326K firstsilicon SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. We declare that the material of product SC-70 / SOT– 323 ORDERING INFO 1.22.
Size:462K firstsilicon SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications.
1 Features 2 compliance with RoHS requirements. We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR 1.23. Size:446K firstsilicon SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. We declare that the material of product 2 1 ORDERING INFORMATION † SOT–23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25°C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col 1.24. Size:377K aeroflex Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features. Qualified to MIL-PRF-19500/255.
Levels: Commerical JANS JANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si). TO-18 (TO-206AA), Surface mount UA & UB Packages Absolute Maximum Ra.